Abstract
We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially resolved low temperature cathodoluminescence proves the long-range ordering of the buried emitters, revealing a yield of ∼90% of optically active, positioned QDs and a strong suppression of emitters on interstitial positions. The emission of single QDs shows a pronounced degree of linear polarization along the [0,−1,1] crystal axis with an average degree of polarization of 94%. Photon correlation measurements of the emission from a single QD indicate the single-photon character of the exciton and biexciton emission lines as well as the cascaded nature of the photon pair.
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