Abstract
We explore the carrier doping effect on magnetic properties of defective graphene with single-atom vacancy by performing spin-polarized density functional theory calculations. Theoretical results show that both hole and electron dopings can effectively modify the local magnetic moments. Besides, we also demonstrate that hole doping can greatly enhance the magnetic coupling, increasing the critical temperature of magnetism, which is absent in electron doping case. The coupling enhanced mechanism can be well understood by the different variation trends of pz-derived states around the Fermi level under hole doping. Thus, our results provide a practical way to tune the magnetism of defective graphene.
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