Abstract
We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature TC=209K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼1020cm−3 and mobility μ∼10cm2∕(Vs).
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