Carrier tunneling in a novel asymmetric quantum well structure

Abstract

Based on the carrier tunneling effect, a novel asymmetric quantum well is designed to improve the carrier injection for a type I quantum well. Two type II quantum wells were chosen to provide the electrons and holes for the type I quantum well via carrier resonant tunneling, respectively. Under the condition that both electrons and holes have fast tunneling rate, the carrier recombination in the type I quantum well can be enhanced. In order to optimize the structure, the small coupling barrier width, energy level resonance and small energy level width should be chosen simultaneously.