Abstract
Abstract The effects of carrier trapping and recombination at copper-decorated grain boundaries in silicon bicrystals have been investigated by means of deep-level transient spectroscopy and photocapacity experiments. The analysis of the experimental data makes use of a specific model for the recombination properties of the copper microprecipitates in the boundary plane, regarded as metallic inclusions in rectifying contact with the silicon matrix. The value of the recombination velocity of the boundary in particular, as deduced from these experiments, is in accordance with a direct determination by electron-beam-induced current measurements on similar samples.
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