Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Hagir M Khalil,Naci Balkan

doi:10.1186/1556-276x-9-21

Abstract

We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.

Highlights

Over the last couple of decades, III-V compounds containing small quantities of nitrogen have received much attention, both experimentally and theoretically
We present the theoretical analysis of the carrier capture and escape time in a Ga0.96In0.04 N0.015As0.985/GaAs multiple quantum wells (MQWs) situated within the built-in field of a GaAs p-i-n structure
It is clear that the hole is more likely to traverse the quantum well than to be captured into the QW

Summary

Introduction

Over the last couple of decades, III-V compounds containing small quantities of nitrogen (dilute nitrides) have received much attention, both experimentally and theoretically. The mechanism was regarded as a classical process where the carrier capture rate is limited by the optical phonon scattering and the mean free path. Another calculation, presented by Burn and Bastard [13], discovered strong oscillations in electron capture rates as a function of the well width. The main disadvantage of dilute nitrides compared to the InP-based material is the poor optical quality in devices with high nitrogen composition. This could be partly overcome by rapid thermal annealing at the expense of blue shifting of the operation wavelength

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Conclusion