Abstract

The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high-mobility MOSFETs-that is, the channel materials are III-V semiconductors, Ge and strained-Si, using the quantum-corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort-channel III-V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.

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