Abstract
Multilayers of a-Si:N/a-SiN:H and a-Si:H/a-SiC:H were investigated by contactless transient photoconductivity measurements. A faster decay of the photoconductivity was observed in the a-Si:H/a-SiC:H multilayer whereas the a-Si:H/a-SiN:H multilayer was characterized by a slower decay relative to a pure a-Si:H film. These effects are ascribed to defects associated with interface states. The electron mobility in the thin a-Si:H layers of the multilayers does not appear to be appreciably different from that in pure a-Si:H films.
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