Abstract
Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365 nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
