Carrier transport and Negative differential resistance of electrically bipolar devices based on poly(3,4-ethylene-dioxythiophene): Poly (styrene sulfonate) film

Abstract

A poly (3,4-ethylene-dioxythiophene): poly (styrene sulfonate) (PEDOT: PSS) film sandwiched between copper electrodes was used to create an electrically bipolar device using a conventional casting technique. X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy-Dispersive X-ray spectroscopy (EDX) were used to investigate the structure, morphological behaviour, and homogeneous distribution of PEDOT conducting grains in the insulator matrix PSS. The device exhibits normal hysteretic electrical behaviour and a negative differential resistance (NDR) effect in the swept current-voltage (I–V) curves. By varying the PEDOT:PSS films' positive charge voltage and charging rate, the NDR effect may be tuned. A maximum current ratio of 103 can exist between the High Conducting State (HCS) and the Low-Conducting State (LCS). Complex impedance measurements of the Cu/PEDOT:PSS/Cu device were carried out at applied ac-voltage amplitude, Vac, range from 0.1 V to 2 V and over the frequency range from 100 Hz to 10 MHz at room temperature. Different models based on ac and dc experimental data are used to characterize and confirmed the carrier transport processes in the HC, LC-States and NDR.