Abstract
The effects of charge detrapping on the performances of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si (PEDOT:PSS/n-Si) and polyaniline/n-Si diodes were examined in this study. The PEDOT:PSS/n-Si diode shows a poor rectifying behavior. In this work, charge trapping phenomena are studied through time domain measurement. The domination of electron (hole) detrapping was found in the PEDOT:PSS (polyaniline) film. A developed understanding of the charge detrapping/trapping effect is critical for device applications.
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