Abstract
We studied the carrier storage and confinement of electrons and holes in InGaAs/GaAs QDs with deep level transient spectroscopy (DLTS) and time-resolved tunneling capacitance spectroscopy (TRTCS). For InGaAs/GaAs QDs with an additional AlGaAs barrier below the QD layer we observe in charge-selective DLTS experiments a hole ground state activation energy of about 580 meV. This activation energy leads to a storage time of about 5 ms at room temperature. With the TRTCS method we studied in detail the electric field dependence of the electron and hole tunneling time from InGaAs QDs without an AlGaAs barrier. The dependence of the tunneling time on the applied electric field allows us to determine the hole and electron localization energy to E H1loc = (210 ± 20) meV and E E1loc = (260 ± 20) meV, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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