Abstract
The magnitude of the Faraday rotation in Ge and Si under hot-electron conditions has been estimated for different orientations of the magnetic and the hot-electron dc field. The possibility of the evaluation of carrier repopulation from the analysis of Faraday-rotation data is discussed. The conditions required for a successful experiment for the application of the method are examined. It is found that the experiment is possible at room temperature, but the conditions are more favorable at liquid-nitrogen or lower temperatures.
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