Abstract
It is demonstrated that the carrier removal caused by implanting equivalent doses of H1+ H2+ and H3+ ions into GaAs is identical and approximately independent of the ion energy in the range 300?500 keV. Some recovery of carriers removed occurs at about 250°C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
