Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing

Abstract

There are continuing efforts to develop type-II superlattice (SL) materials for very long wavelength infrared (VLWIR) detector applications. However, the SLs have high residual electron background doping densities that depend on SL growth conditions, which lead to shorter minority carrier lifetime and lower performance parameters than theoretically predicted. In this study, the authors compare the technical advantages of using InAs/GaInSb over InAs/GaSb SL with respect to reducing the electron doping levels. Our temperature-dependent electrical transport measurements show that the InAs/GaInSb SL design has a lower electron density than the InAs/GaSb SL with the same bandgap and have electron densities (mobilities) on the order of the mid 1011 cm−2 (25 000 cm2/V s). Since small period InAs/GaInSb SLs also produce greater Auger recombination suppression for a given VLWIR gap than the large period InAs/GaSb SL, the InAs/GaInSb SL appears to be a better candidate for long lifetime IR materials for future very long wavelength infrared devices.