Abstract
We present a comparison of theoretical calculations and experimental measurements of the Auger recombination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations and measurements indicate that the rate depends on density as ${n}^{2}$ for low density, and changes to an $n$ dependence when the electrons and holes become degenerate. The calculations are the first to incorporate superlattice umklapp processes, which contribute about half of the total rate and substantially improve the agreement with experiment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have