Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

Abstract

We observed the carrier recombination in SrTiO3 single crystals with several crystal faces and Nd doping concentrations using time-resolved photoluminescence and microwave photoconductivity decay methods. The shapes of the decay curves were independent of the excited carrier concentrations, and thus the carriers recombined through the Shockley–Read–Hall and surface recombination processes. From the measurements for different crystal faces, we found that, although the surface recombination is significant for the (100), (110), and (111) faces, they have similar surface recombination velocities of ∼106 cm s−1. Therefore, as photocatalysts, the shape of the materials has a minor effect on the energy conversion efficiency. Based on the dependence of the Nb doping concentration, a high doping concentration significantly enhances the carrier recombination, whereas a moderate Nb doping induces only a slight reduction in the time constants of the carrier decay. In addition, the time constant increases with temperature, and thus moderate Nb doping will have a positive effect on the energy conversion efficiency of SrTiO3 photocatalysts at high temperatures.