Abstract
Carrier recombination and diffusion dynamics in a 100-μm-thick GaN grown by hydride vapor phase epitaxy on semi-insulating GaN:Mg substrate have been studied by means of transient photoluminescence under one-photon (1P) and two-photon (2P) excitations. For 2P bulk excitation the luminescence transients featured an exponential decay with the time constant of 1100ps, which was mainly due to carrier capture to nonradiative deep traps. Meanwhile for 1P surface excitation, the luminescence transients showed a nonexponential decay with the mean time constant of 440ps, which was shown to be due to both carrier in-depth diffusion and recombination.
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