Abstract
The behavior of a small carrier pulse in a semiconductor is investigated under space-charge conditions (double injection) with trapping and recombination effects, using the zeroth and first-order moments of pulse carrier densities. The general result—corroborated by a detailed study of two simplified models—shows a two-stage motion of the pulses: during a short time, they move in the drift direction of the corresponding individual carriers. Next, as in the (quasineutral) ambipolar case, the pulses move in a common direction, that of the individual minority carriers.
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