Abstract
The carrier profile for MBE grown In0.35Ga0.65As/GaAs multiquantum well laser structures with nominally undoped and beryllium-doped active regions was determined by using the capacitance–voltage (C–V) technique at room temperature. A simple theoretical model was used to extract the impurity concentration and the quantum-well carrier density from the experimental profiles. We obtained a high carrier concentration in nominally undoped devices caused by a strong growth temperature dependent Be diffusion from the p-cladding layer, and no difference between doped samples with different nominal dopant location.
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