Abstract
Silver (Ag) and graphene (Gr) inks have been engineered to serve as efficient electrical contacts for solution-processed two-dimensional (2D) organo-halide (CH3(CH2)3NH3)2(CH3NH3)n−1PbnI3n+1 (n = 4) layered perovskites, where all inkjet-printed heterostructure photodetectors (PDs) were fabricated on polyimide (PI) substrates. To date, limited studies exist that compare multiple contacts to enable high-performance engineered contacts to 2D perovskites. Moreover, of these few reports, such studies have examined contacts deposited using vapor-based techniques that are time-consuming and require expensive, specialized deposition equipment. In this work, we report on the inkjet printed, direct contact study of solution-processed, 2D perovskite-based PDs formed on flexible PI substrates. Solution processing offers a cost-effective, expedient route for inkjet printing Gr and Ag using a dispersion chemistry developed in this work that is compatible with the underlying 2D perovskite layer to construct the PDs. The wavelength λ-dependent photocurrent Ip peaked at λ ~ 630 nm for both PDs, consistent with the bandgap Eg ~ 1.96 eV for our semiconducting 2D perovskite absorber layer. The external quantum efficiency was determined to be 103% for Ag-perovskite PDs, where strain-dependent bending tests were also conducted to reveal the opto-mechanical modulation of the photocurrent in our devices.
Highlights
Organic–inorganic hybrid perovskites described by the formula ABX3 (A = CH3NH3+; B = Pb2+ or Sn2+; and X = Cl−, I−, Br−) have recently emerged as attractive materials for solar energy conversion[1,2,3] and various optoelectronic applications[4,5]
We provide prototypical demonstrations of inkjet printed, solution-processed electrical contacts to inkjet-printed 2D perovskites formed on flexible substrates
Besides material characterization conducted on our 2D (CH3(CH2)3NH3)2(CH3NH3)n−1 PbnI3n+1 (n = 4) formulations using techniques such as x-ray diffraction (XRD), including at low-grazing angles (θ = 2.5°–12°), and scanning electron microscopy (SEM), the device figures of merit, such as R and D, ON/OFF ratio, τrise and τfall, External quantum efficiency (EQE) were calculated for both the Gr and the Ag-contacted PDs
Summary
Besides material characterization conducted on our 2D (CH3(CH2)3NH3)2(CH3NH3)n−1 PbnI3n+1 (n = 4) formulations using techniques such as x-ray diffraction (XRD), including at low-grazing angles (θ = 2.5°–12°), and scanning electron microscopy (SEM), the device figures of merit, such as R and D, ON/OFF ratio, τrise and τfall, EQE were calculated for both the Gr and the Ag-contacted PDs. the λ-dependent Ip and strain-dependent bending measurements were performed.
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