Abstract
The standard theories of avalanche statistics for two carrier impact ionization by Tager, McIntyre, Personnick, and others, tacidly assume that the number of possible ionizations per primary carrier transit is very large; this assumption is not valid in modern small dimension devices. A new realistic theory is presented based on a finite number of discrete ionization processes. New expressions are derived for the gain and the noise. The latter is shown to be smaller than follows from the standard theories, which can explain recent low noise data by Goedbloed and Smeets on silicon n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> - p-π-p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> avalanche photodiodes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.