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Abstract
Pentacene field-effect transistors were prepared on silicon nitride membranes for scanning transmission X-ray microscopy (STXM) investigations. The membranes were modified by different self-assembled monolayers (SAMs). Pentacene was deposited atop the SAM-treated membrane and the in-plane orientation of the grains were subsequently investigated by polarization dependent STXM measurements. The grain sizes were determined and compared to those obtained from atomic force microscopy (AFM) measurements. Statistical analysis of the grain orientation was correlated with the charge carrier mobility of the films, in which we observed an increase in the mobility with increasing grain size and decreasing surface roughness of the SAM.
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