Abstract
Precise optimization and modeling of electron-hole recombination probability in organic light-emitting diodes (OLEDs) are necessary for developing a comprehensive description of their functioning. High-performance organic materials, new device architecture and advanced processing technologies are developed to emerge the development of the OLED community. It is well acknowledged that electrical processes in the OLEDs include three key steps, i.e. charge injection, charge transport, and charge recombination. In this paper, we demonstrate a quantitative approach to investigate the effects of carrier mobility of electron transporting layer (ETL) on electric field and recombination profile across the organic layers of the device using software package SETFOS. The simulation outcomes proposed that a higher electron mobility results in a wider recombination zone in the desired emissive layer (EML), while narrower in case hole mobility is comparatively higher.
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