Abstract
Ferromagnetic Si1−xMnx wasprepared by implanting B+ and Mn+ ions in sequence into p-type Si(100) at room temperature and post-annealing at700–900 °C. Superparamagnetic nano-sized silicide precipitates, 10–27 at.% Mn, were found near the surface of allSi1−xMnx samples.Annealing at 800 °C or below leads to the formation of a thin Si(Mn) layer, with 1.1 at.% Mn,∼180 nm beneath the surface, giving rise to ferromagnetism with a Curie temperatureabove 250 K. The high-temperature ferromagnetism is attributed to the indirectexchange mediated by localized carriers in the impurity states. The Mn content of1–1.5 at.%, having been separately reported to show room-temperature ferromagnetismseveral times by different groups, seems meaningful for Si-based diluted magneticsemiconductors (DMS). Possible extensions of our work presented here are elucidated.
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