Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors

Abstract

Microscopic features of carrier localization, minibands, and spectral currents of InAs/GaSb based type-II superlattice (T2SL) mid-infrared detector structures are studied and investigated in detail. In the presence of momentum and phase-relaxed elastic scattering processes, we show that a self-consistent non-equilibrium Green’s function method within the effective mass approximation can be an effective tool to fairly predict the miniband and spectral transport properties and their dependence on the design parameters such as layer thickness, superlattice periods, temperature, and built-in potential. To benchmark this model, we first evaluate the band properties of an infinite T2SL with periodic boundary conditions, employing the envelope function approximation with a finite-difference discretization within the perturbative eight-band framework. The strong dependence of the constituent material layer thicknesses on the band-edge positions and effective masses, offers a primary guideline to design performance-specific detectors for a wide range of operation. Moving forward, we demonstrate that using a finite T2SL structure in the Green’s function framework, one can estimate the bandgap, band-offsets, density of states and spatial overlap which comply well with the results and the experimental data. Finally, the superiority of this method is illustrated via a reasonable estimation of the band alignments in barrier-based multi-color non-periodic complex T2SL structures. This study, therefore, provides deep physical insights into the carrier confinements in broken-gap heterostructures and sets a perfect stage to perform transport calculations in a full-quantum picture.