Abstract
Carrier dynamics in wide‐band‐gap AlGaN/AlGaN multiple quantum wells (MQWs) has been investigated by studying a set of MQWs with well widths varying from 1.65 to 5.0 nm. The structures were grown by metal‐organic chemical vapor deposition and investigated using photoluminescence spectroscopy under transient and quasi‐steady‐state conditions and light‐induced transient grating technique. It is demonstrated that the fast initial PL intensity decay is caused by recovery of built‐in electric field, while the carrier lifetime is strongly influenced by carrier localization. The scale of the localization was estimated by fitting the results of Monte Carlo simulation of exciton hopping with experimental PL linewidth dependence on temperature.
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