Abstract
The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2–5 μm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calculated. In a HgCdTe DH laser, Auger recombination dominates the carrier loss at threshold. In a HgCdTe MQW laser, on the other hand, radiative recombination dominates the carrier loss. MQW lasers shown improved temperature performance over conventional DH lasers.
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