Abstract
The minority carrier lifetime τp has been measured by open circuit voltage decay (OCVD) and current recovery time (CRT) (or Lax-Neustadter's) techniques in high-voltage (10 kV) 4H-SiC p+n0n+ diodes. The τp value measured by OCVD is 1.55 µs at room temperature, which is the highest reported value for 4H-SiC diodes. CRT measurements indicate a homogeneous distribution of carrier lifetime across the diode base without any deteriorated layer between the p+-emitter and the n0-base. Some limitations of lifetime measurements by CRT are discussed.
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