Abstract
Carrier injection at the metal/semiconductor interface has been analyzed using diode structures fabricated from semiconducting polymers. The current versus voltage ( I–V) curves are field dependent (rather than voltage dependent) suggesting a tunneling mechanism. Using single-carrier devices, either ‘hole-only’ or ‘electron-only’, we analyze the I–V curves in terms of Fowler-Nordheim tunneling. The results indicate that these polymer sandwich structures are tunnel diodes. Using this analysis, we find that polyaniline, in its conducting form, is more electronegative than indium/tin oxide (ITO) and provides a smaller barrier to hole injection into poly(2-methoxy-5-(2′-ethyl-hexoxy)-1,4-phenylene-vinylene), MEH-PPV. As a result, bilayer transparent electrodes (ITO/PANI) lead to significant improvement in light-emitting diode performance.
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