Abstract
The I-V characteristics of GaAs n/sup +/-i-p/sup +/-i-n/sup +/ diode structures grown by MLE with source-drain distances from 500 /spl Aring/ to 950 /spl Aring/ have been measured at temperatures ranging from 77 K to 423 K. The analysis of experimental results indicates that the current flows over the static-induction-controlled potential barrier. On this basis, quantitative comparison with thermionic emission theory which assumes injection of ballistic electrons are made.
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