Abstract
Using the full potential linearized augmented plane wave (FLAPW) method, we report the theoretical results that the carrier induced switching of magnetic interaction between two magnetic layers in Co(111)/Graphene/Ni(111) (Co/Gr/Ni) is predicted. The Co/Gr/Ni shows an antiferromagnetic (AFM) ground state when there are no external carriers. The antiferromagnetic interaction is still observed for hole carriers. Very interestingly, however, the magnetic exchange interaction between Ni and Co layers can be manipulated in such a way as to change an AFM to a ferromagnetic (FM) state by injecting external electrons if the electron carrier concentration is larger than 0.1 × 1014 per cm2. Overall, we propose that a potential spin switching by external carriers or electric field can be realized in Co/Gr/Ni. Besides, the calculated DOS feature indicates that the Co/Gr/Ni system may manifest quite different transport properties when a bias voltage is applied. For instance, the current parallel to the film surface can be completely spin polarized from minority spin electrons. In contrast, the current perpendicular to the film surface will be positively spin polarized from majority spin electrons.
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