Abstract
We report on the carrier-induced ferromagnetism in Ge(Mn,Fe) magnetic semiconductor insulating-type thin-film structures prepared using sequential deposition at Tg=520K with subsequent annealing at Tg. In the resulting films Mn and Fe are diffused in the Ge matrix without compromising the epitaxial structure. The anomalous Hall effect serves as a manifestation of the carrier-induced magnetism, with p-type conductivity and the Curie temperature TC=209K. The additional doping with Fe stabilizes epitaxial growth and carrier-mediated magnetism at levels of magnetic doping exceeding 10%. We conclude that indirect ferromagnetic exchange is mediated by localized holes with concentration n∼1020cm−3 and mobility μ∼10cm2∕(Vs).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
