Abstract
The influence of thermalized non-coherent carriers on the dielectric function of GaAs/AlAs quantum wells is investigated by reflection spectroscopy. Experiments are performed using the method of spectral interferometry, where both amplitude and phase of reflected pulses can be determined. For low excitation density the complex coefficient of reflection can be described using as dielectric function a broadened Elliot formula. With increasing carrier density pronounced nonlinearities appear in both amplitude and phase due to many-body effects between excited carriers. The nonlinear behavior fits very well to the results of a many-body theory based on the Semiconductor Bloch equations including memory effects in the scattering processes between carriers and the polarization induced by the probe pulse.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The European Physical Journal B - Condensed Matter
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
