Abstract
Zerbst and DLTS measurements indicate the level active for hole generation in samples of n-InP is located near Ev+0.5 eV, and has a cross section for electron emission at least 108 times that for holes. While the Zerbst technique does not establish the presence of a surface inversion layer, the present data in combination with other work indicates the C–V response of this structure under negative bias is controlled by hole trapping at the interface or in the oxide. Interface trapping of electrons becomes less severe as deposition temperature is lowered.
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