Abstract
Electrical studies of the Zn, Sn codoped bixbyite (In2O3) phase (ZITO), a promising alternative to indium–tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off‐stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin‐film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin‐film specimens. The Sn‐excess character explains the persistent n‐type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of “special” (optimized conductivity) compositions in phase space for pulsed laser‐deposited films, and the propensity for surface chemical depletion in both bulk and thin‐film specimens.
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