Abstract
A physically based model for carrier freezeout in strained p-type Si 1− x Ge x is presented using the band parameters of coherently strained Si 1− x Ge x alloy on 〈001〉 Si substrate. It is found that the carrier freezeout is mitigated at low temperatures with the increasing of Ge fraction. The proposed model proved to give consistently accurate values for base sheet resistance and other device characteristics of SiGe heterojunction bipolar transistors (HBTs) at low temperatures. The results may provide a rational basis for the design of low temperature operation SiGe HBTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
