Abstract
Coupled multiquantum well structures consisting of GaN(10Å)∕Al0.5Ga0.5N(22Å)∕GaN(20Å) bounded by Al0.5Ga0.5N (100Å) barriers were characterized by photoluminescence measurements. The recombination dynamics of carriers localized in asymmetric double quantum wells were studied by analyzing temperature-dependent and time-resolved photoluminescence spectra. The authors observed carrier transfer between weakly and strongly localized states which resulted in a stronger blue emission with increasing temperature, and they analyzed its effects on the spectra in terms of the quantum confined screening effect. Time-resolved measurements yielded lifetimes of various transitions which had different origins ranging between ∼120 and ∼1300ns.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
