Abstract
The present study reports on the optical properties of epitaxially grown InAs quantum dots (QDs) inserted within an InGaAs strain-reducing layer (SRL). The critical energy states in such QD structures have been identified by combining photoluminescence (PL) and photoluminescence of excitation (PLE) measurements. Carrier lifetime is investigated by time-resolved photoluminescence (TRPL), allowing us to study the impact of the composition of the surrounding materials on the QD decay time. Results showed that covering the InAs QDs with, or embedding them within, an InGaAs SRL increases the carrier dynamics, while a shorter carrier lifetime has been observed when they are grown on top of an InGaAs SRL. Investigation of the dependence of carrier lifetime on temperature showed good stability of the decay time, deduced from the consequences of improved QD confinement. The findings suggest that embedding or capping the QDs with SRL exerts optimization of their room temperature optical properties.
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