Abstract
AbstractCarrier recombination dynamics in Zn1–xMgxO alloys were studied by time‐resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations.Emission energy dependent dynamics were analyzed by the application of a theoretical model, yielding a characteristic localization energy of 60 ± 15 meV for the sample with the highest Mg concentration of x = 0.21. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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