Abstract
We use optical-pump terahertz (THz)-probe spectroscopy to study carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs and deposited in a superlattice structure. Measurements are performed at several pump fluences on samples with different superlattice periods, enabling a determination of the time-dependent conductivity. Subpicosecond carrier capture times are obtained, indicating the potential of these devices as time-domain THz detectors with performance comparable to low-temperature grown GaAs and superior control of material parameters.
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