Abstract
The excitation power and temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra were studied in green InGaN/GaN multiple quantum well (MQW)-based light-emitting diodes (LED). An examination of the PL-325, PL-405, and EL spectra at identical optical or electrical generation rates at room temperature showed that the normalized spectra exhibited different characteristic peaks. In addition, the temperature behavior of the peak energy was S-shaped for the PL-405 spectrum, while it was V-shaped for the EL spectrum. These measurement results demonstrate that the excitation source can affect the carrier dynamics about the generation (injection), transfer, and distribution of carriers.
Highlights
In recent years, GaN-based light emitting diodes (LEDs) have been used in an increasing number of applications, including general lighting applications and visible light communications, due to the significant progress achieved in GaN material growth and device manufacturing [1,2,3]
CIonnsculmusmioarnys, we investigated the carrier dynamics of the metalorganic chemical vapor deposition (MOCVD)-grown InGaN/GaN MmoIuneQtaGWtshauIseNrneue/mnGpdseiatuneaNrtmxr3iaem2ls5Mual-allrQatyysseW,esrrh,fswo4rwo0em5ue-dnliatndhtsheveearre,utsanttnh3idgde2oa5pcpt-uheelraoddrsteoGen-rtagth,Neeenx4ceb0ircuta5aaft-tfreileroadrinsecleraasryor,reudirreyacrtennsosadw,tmhreeeriscecppusde-rGcirstoeativrnfNiebtlulytah.teyeTexdehcr,etiMhtaParnOoLtdiu-oC3gnn2Vho5-Ds-ogurrocwe trraenspspeocrtitvwelays. oTbhseerPveLd-3. 2T5hmereefaosruer, eNmBeEnat nrdesYuLltsbashndowemedissthioantsthweerpehoobtsoe-rgveende. raTtheed carrier were distributed throughout the epitaxial layer from the undoped GaN buffer layer to th p-GaN layer, and no transport was observed
The PL-405 measurement results showed that green emission was obtaine from all InGaN QWs accompanied by a band-tail state on the low-energy side, becaus
Summary
GaN-based light emitting diodes (LEDs) have been used in an increasing number of applications, including general lighting applications and visible light communications, due to the significant progress achieved in GaN material growth and device manufacturing [1,2,3]. With the increase in the excitation power to 7.5 × 1026 cm−3s−1, a new emission peak at approximately 3.40 eV appeared on the high energy side of the YL band.
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