Abstract
The carrier dynamics of $\mathrm{B}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{3}$ is studied using the femtosecond pump-probe technique. Three distinct processes, including free carrier absorption, band filling, and electron-hole recombination, are found to contribute to the reflectivity changes. The two-temperature model is used to describe the intraband energy relaxation process of carriers, and the Drude contribution well explains the intensity dependence of the peak values of the nonoscillatory component in the reflectivity signal. The combined effects of free carrier absorption and band filling result in a reflection minimum at about 2 ps after laser excitation. The nonzero background signal increases linearly with the pump fluence, which is attributed to the electron-hole recombination. Finally, our results provide an illustration of investigating the carrier dynamics in semiconductors from the ultrafast reflectivity spectra.
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