Abstract
AbstractActive regions for mid‐ultraviolet laser diodes grown on bulk AlGaN templates are investigated by time‐resolved photoluminescence. The active regions were grown pseudomorphically on thick, relaxed AlGaN on bulk GaN in the semi‐polar ($20{\bar {2}}1$) orientation where it has been shown that the glide of dislocations create strain relieving defects confined to the AlGaN/GaN interface, away from the active region. The photoluminescence lifetimes were found to have mono‐exponential decays of around 500 ps and calculated radiative and non‐radiative lifetimes are compared to previously reported results for active regions on bulk m‐plane GaN.
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