Abstract
We lay the connection between the carrier dynamics in a small ID loop driven by a time-dependent flux and stationary quantum tunneling through a ID periodic structure between two reservoirs. It is explicitly shown that the phenomenon of dynamical quasi-randomization of phases in the loop, which leads, among other things, to current saturation behaviour, is physically equivalent to the phenomenon of field-induced quasi-disorder in the periodic structure between reservoirs. In both cases the respective types of disorder lead to apparent localization effects on the resistance. A new and independent confirmation of Landauer's R/T formula is obtained.
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