Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers

Abstract

Electrical control of spin transport at room temperature is crucial for spintronic applications. The authors' calculations show that spin currents can be guided quite efficiently by employing carrier drift in Y-shaped graphene channels that act as spin-current demultiplexers. Introducing drift can reduce transport times, compared to diffusive transport, making this approach suitable for high-frequency operation. Exploration of different geometries confirms the scalability of the proposed architecture. These results indicate that spin drift can help to improve the functionality of spintronic devices, combining multiplexing with $i\phantom{\rule{0}{0ex}}n$ $s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}u$ memory capability.