Abstract
The carrier-doping dependence of Jc in Ba1-xKxFe2As2 single crystals and superconducting wires were investigated. Ba1-xKxFe2As2 single crystals (0.24 < x < 0.4) are synthesized by commonly used FeAs self-flux method, while Ba1-xKxFe2As2 wires are fabricated by powder-in-tube (PIT) method and hot isostatic pressing (HIP) technique, using polycrystalline Ba1-xKxFe2As2 (0.25 < x < 0.4) prepared by solid state reaction and silver and copper tubes. Their magnetic Jc was characterized by magnetization measurements. We found that the x-dependence of Jc in single crystals shows the peak in under-doped region around x ~ 0.28 similar to previous study. In the HIP wire, although significant peak is not observed, Jc shows a broad plateau in a wide doping region of 0.3 < x < 0.4. These results indicate that Jc in the under-doped Ba1-xKxFe2As2 HIP wire is controlled by interglanular Jc.
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