Abstract
In this letter the carrier dependence of the radiative bimolecular coefficients obtained from differential carrier lifetime measurements is reported. The bimolecular coefficient B(n) decreases significantly with carrier density. It is found that B(n) is well approximated by B(n)≂B0−B1n, with B1/B0=(1.1±0.2)×10−19 cm3 for GaAlAs and (1.6±0.2)×10−19 cm3 for 1.3 μm InGaAsP. This effect has a strong influence on the spontaneous emission efficiency in both InGaAsP and GaAlAs light sources.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
