Abstract
Abstract Applying the general theory of carrier density fluctuations in semiconductors (Van Vliet), based on the formalism of irreversible thermodynamics, expressions for the matrix elements of carrier density fluctuations and for the relaxation times are given in the case of semiconductors with one kind of trapping- or recombination centers. These expressions have been approximated in some cases by formulae that can be verified experimentally, for instance trapping of minority carriers in deep lying centers (occuring in PbS photoconductors) and trapping of carriers at shallow traps in nearly intrinsic semiconductors. With the aid of the extended g-v theorem it is finally proved that the derived expressions for the noise in semiconductors hold for photoconductors only if the centers act as traps.
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