Abstract
An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. The nonradiative energy transfer, from an InGaN/GaN quantum well to CdSe/ZnS nanocrystal quantum dots embedded in an ~80 nm layer of PMMA, is investigated over a range of carrier densities within the quantum well. The plasmon-enhanced energy transfer efficiency is found to be independent of the carrier density, with an efficiency of 25% reported. The dependence on carrier density is observed to be the same as for conventional nonradiative energy transfer. The plasmon-coupled energy transfer enhances the QD emission by 58%. However, due to photoluminescence quenching effects an overall increase in the QD emission of 16% is observed.
Highlights
The development and optimization of high-efficiency semiconductor light emitting diodes (LEDs) for applications in solid-state lighting (SSL) and displays is an area that has received a great deal of attention in recent years
Where P is the laser pumping power, hν is the energy of the injected photons, θ is the spot size of pumping laser, dactive is the thicknesses of the active region, f is the repetition rate of pumping laser, αInGaN is the absorption coefficient of the InGaN quantum wells (QWs), and R is the reflectance at the wavelength of the pump laser at 405 nm, respectively [39]
We have investigated plasmon-enhanced nonradiative energy transfer from an InGaN/GaN SQW to core-shell CdSe/ZnS quantum dots (QDs) embedded in a ~80 nm host poly(methyl methacrylate) (PMMA) layer
Summary
The development and optimization of high-efficiency semiconductor light emitting diodes (LEDs) for applications in solid-state lighting (SSL) and displays is an area that has received a great deal of attention in recent years. Demonstrations of pumping via nonradiative energy transfer have been achieved using near surface QWs and a thin layer of QDs [4,5,7] or etched structures which allow the acceptors to be brought in close proximity to the QW [10,11]. Both options introduce additional fabrication complexity for commercial devices. The need to minimise the separation between the QW donor and organic acceptor is a critical issue for commercial device fabrication
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